MOVPE InP based material for millimeter and submillimeter wave generation and amplification

Author

Strupinski, W. ; Kosiel, K. ; Jasik, A. ; Jakiela, R. ; Jelenski, A. ; Kollberg, E. ; Dillner, L. ; Nawaz, M.

Author_Institution

Inst. of Electron. Mater. Technol., Warsaw, Poland

Volume

1

fYear

2000

fDate

2000

Firstpage

129

Abstract

The potential of the MOVPE growth process for millimeter and submillimeter wave generation and amplification is presented. The increase in layer quality, the improved homogeneity and purity, the precision of mono-layers growth and wide spectrum III-V compounds makes MOVPE techniques very attractive for modern device applications. The characterisation results of the heterostructures dedicated for HBVs (heterostructure barrier varactors) and 2-DEG transistors (HEMT) are described

Keywords

III-V semiconductors; high electron mobility transistors; indium compounds; millimetre wave amplifiers; millimetre wave devices; millimetre wave generation; semiconductor growth; submillimetre wave amplifiers; submillimetre wave devices; submillimetre wave generation; two-dimensional electron gas; vapour phase epitaxial growth; varactors; 2-DEG transistors; HEMT; InP; InP based material; MOVPE growth process; heterostructure barrier varactors; homogeneity; layer quality; millimeter wave amplification; millimeter wave generation; precision mono-layers growth; purity; submillimeter wave amplification; submillimeter wave generation; wide spectrum III-V compounds; Epitaxial growth; Epitaxial layers; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Millimeter wave devices; Temperature; Tensile stress; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Radar and Wireless Communications. 2000. MIKON-2000. 13th International Conference on

Conference_Location

Wroclaw

Print_ISBN

83-906662-3-5

Type

conf

DOI

10.1109/MIKON.2000.913890

Filename

913890