Role of oxygen precipitates on the performance of crystalline silicon-based photovoltaic devices

Author

Ahrenkiel, R.K. ; Johnston, S.W. ; Gedvilas, L.M. ; Webb, J.D. ; Bisaillon, J.C.

Author_Institution

Nat. Renewable Energy Lab., Golden, CO, USA

fYear

2000

fDate

2000

Firstpage

252

Lastpage

255

Abstract

Oxide precipitates (OPs) in Czochralski-grown silicon were investigated by Fourier transform infrared (FTIR) spectroscopy and ultra-high frequency photoconductive decay (UHFPCD). These data were compared with the photovoltaic properties of test diodes made on the same wafers. The results indicate a strong correlation between oxide precipitate concentration and the reduction of minority-carrier lifetime and diffusion length. The photovoltaic properties of the test diodes also degraded with the OP concentration

Keywords

Fourier transform spectroscopy; carrier lifetime; elemental semiconductors; infrared spectroscopy; minority carriers; photoconductivity; silicon; solar cells; Czochralski-grown silicon; FTIR; Fourier transform infrared spectroscopy; Si; crystalline silicon-based photovoltaic devices; minority-carrier diffusion length reduction; minority-carrier lifetime reduction; oxide precipitate concentration; oxygen precipitates; photovoltaic properties; test diodes; ultra-high frequency photoconductive decay; Crystallization; Diodes; Fourier transforms; Frequency; Infrared spectra; Photovoltaic systems; Silicon; Solar power generation; Spectroscopy; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.915805

Filename

915805