DocumentCode
1745087
Title
Modeling of random channel parameter variations in MOS transistors
Author
Lan, Mao-Feng ; Geiger, Randall
Author_Institution
Dept. of Electr. Eng. & Comput. Eng., Iowa State Univ., Ames, IA, USA
Volume
1
fYear
2001
fDate
6-9 May 2001
Firstpage
85
Abstract
Widely used approaches to modeling random effects and extracting random parameters in matching-critical circuits are based upon models derived under the widely accepted premise that distributed parameter devices can be modeled with lumped parameter models. In this paper, a new stochastic approach based upon a distributed parameter model is presented that offers improvement in predicting the effects of random parameter variations on device matching
Keywords
MOSFET; impedance matching; semiconductor device models; stochastic processes; MOS transistors; device matching; distributed parameter devices; lumped parameter models; matching-critical circuits; modeling; random channel parameter variations; random parameter variations; stochastic approach; Area measurement; Character recognition; Current measurement; Differential amplifiers; MOSFETs; Mirrors; Mixed analog digital integrated circuits; Predictive models; Stochastic processes; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-6685-9
Type
conf
DOI
10.1109/ISCAS.2001.921794
Filename
921794
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