DocumentCode
1745484
Title
A new class of capacitive micromachined ultrasonic transducers
Author
Ahrens, O. ; Hohlfeld, D. ; Buhrdorf, A. ; Glitza, O. ; Binder, J.
Author_Institution
Inst. for Microsensors, -Actuators, & -Syst., Bremen Univ., Germany
Volume
1
fYear
2000
fDate
36800
Firstpage
939
Abstract
A new set-up of capacitive micromachined ultrasonic transducers (cMUT) will be described that recently have been successfully realized. This new transducer design utilizes a structured silicon oxide sacrificial layer as well as a highly doped and, therefore, conductive membrane of polycrystalline silicon. So far, cMUT have been produced with resonance frequencies in the range from 1 to 4 MHz. These devices have been applied to a displacement measurement in air
Keywords
displacement measurement; micromachining; ultrasonic transducers; Si; SiO2; capacitive micromachined ultrasonic transducers; conductive membrane; displacement measurement; polycrystalline silicon; resonance frequencies; structured silicon oxide sacrificial layer; transducer design; Biomembranes; Displacement measurement; Electrostatic actuators; Fabrication; Piezoelectric transducers; Resonance; Resonant frequency; Sensor arrays; Silicon; Ultrasonic transducers;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 2000 IEEE
Conference_Location
San Juan
ISSN
1051-0117
Print_ISBN
0-7803-6365-5
Type
conf
DOI
10.1109/ULTSYM.2000.922695
Filename
922695
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