• DocumentCode
    1745584
  • Title

    Towards a comprehensive model of electronic stopping in amorphous and crystalline silicon

  • Author

    Hobler, G. ; Murthy, C.S.

  • Author_Institution
    Inst. fur Festkorperphys., Wien Univ., Austria
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    209
  • Lastpage
    212
  • Abstract
    Published experimental data on ion transmission and range profiles in silicon are used to calibrate a hybrid model of local and nonlocal electronic stopping. The resulting comprehensive model is applicable to both the random and the channeling case in a wide energy range for ions with atomic numbers 3⩽Z1⩽33. The random stopping power is compared to the ZBL electronic stopping power. Limitations are briefly discussed
  • Keywords
    amorphous semiconductors; elemental semiconductors; energy loss of particles; silicon; Si; channeling; comprehensive model; electronic stopping; hybrid model; ion transmission; local electronic stopping; nonlocal electronic stopping; random stopping power; range profiles; Aerospace electronics; Amorphous materials; Crystalline materials; Crystallization; Energy loss; History; Hybrid junctions; Nuclear electronics; Research and development; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology, 2000. Conference on
  • Conference_Location
    Alpbach
  • Print_ISBN
    0-7803-6462-7
  • Type

    conf

  • DOI
    10.1109/.2000.924126
  • Filename
    924126
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1745584