A gain-variable Ka-band SSPA using MMIC technology

Author

Uhm, Man-Seok ; Jang, Dong-Pil ; Yom, In-Bok ; Lee, Seong-Pal

Author_Institution

Satellite Commun. Syst. Dept., ETRI-Radio & Broadcasting Technol. Lab., Taejon, South Korea

fYear

2000

fDate

2000

Firstpage

617

Lastpage

620

Abstract

This paper presents a gain-variable Ka-band 6 W SSPA using MMIC chips fabricated by 0.15 μm GaAs HEMT technology and the design results of an SSPA with improved performance. The SSPA consists of a driver amplifier (DRA) module, high power amplifier (HPA) modules, power dividers and power combiners. The SSPA, being operated on a panel with a heat pipe, achieves a linear gain of 56.1 dB, output power of 37.78 dBm (6 Watts, typical), PAE of 5.9% and an associated gain of 48.1 dB in the frequency from 20.655 GHz to 20.855 GHz. In addition the updated SSPA is designed to have 58.16 dB as the linear gain, 43.15 dBm (20.7 W) as the saturation power and 17.3% as the PAE using newly fabricated 2 W HPA MMICs

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gain control; gallium arsenide; microwave power amplifiers; modules; power combiners; power dividers; 0.15 micron; 17.3 percent; 2 W; 20.655 to 20.855 GHz; 20.7 W; 48.1 to 58.16 dB; 5.9 percent; 6 W; GaAs; GaAs HEMT technology; Ka-band solid-state power amplifier; MMIC technology; SHF; driver amplifier module; gain-variable Ka-band SSPA; heat pipe; high power amplifier modules; power combiners; power dividers; Cogeneration; Driver circuits; Gain; Gallium arsenide; HEMTs; High power amplifiers; MMICs; Power combiners; Power dividers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.925910

Filename

925910