Effect of strain relaxation layers in high Indium content metamorphic InGaAs/InAlAs modulation doped heterostructures

Author

Gozu, S. ; Kita, T. ; Sato, H. ; Yamada, S.

Author_Institution

RIKEN, Inst. of Phys. & Chem. Res., Saitama, Japan

fYear

2001

fDate

2001

Firstpage

55

Lastpage

58

Abstract

We have investigated effect of residual strain appeared in the transport and optical properties of high indium content metamorphic In _0.75Ga_0.25As/In_0.75Al_0.25As modulation doped heterostructures grown via (inverse step: IS-) step graded buffer (SGB). The effect of residual strain was controlled by IS structure and a drastic decrease of residual strain (about one third) was observed. We have also observed an improved low temperature (77 K) electron mobility, when the IS buffer was used. We found that the residual strain is one of the important interface condition which determines the low temperature (77 K) electron mobility

Keywords

III-V semiconductors; aluminium compounds; electron mobility; gallium arsenide; indium compounds; semiconductor heterojunctions; 77 K; In_0.75Ga_0.25As-In_0.75Al_0.25As; InGaAs/InAlAs metamorphic modulation doped heterostructure; electron mobility; indium content; inverse step structure; optical properties; residual strain; step graded buffer; strain relaxation layer; transport properties; Capacitive sensors; Electron mobility; Epitaxial layers; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical buffering; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929017

Filename

929017