Study and characterization of copper-indium-ditelluride

Author

Kemiha, F. ; Zegadi, A. ; Mohamadi, T.

Author_Institution

Dept. of Electron., F.A. Setif Univ., Algeria

Volume

1

fYear

2001

fDate

2001

Firstpage

601

Abstract

In this paper, single crystals of chalcopyrite semiconductor CuInTe₂ have been grown by a vertical Bridgman technique. The Hall effect, mobility, resistivity and carrier concentration data have been obtained for several samples using the van der Pauw technique. The optical properties were studied by photoacoustic spectroscopy (PAS) in order to determine parameters such as absorption spectra, band gap and defect level states

Keywords

Hall effect; copper compounds; crystal growth from melt; defect states; electrical resistivity; energy gap; hole density; hole mobility; indium compounds; infrared spectra; photoacoustic spectra; semiconductor growth; solar cells; ternary semiconductors; CuInTe₂; Hall effect; absorption spectra; band gap; carrier concentration data; chalcopyrite semiconductor; copper indium ditelluride; defect level state; mobility; optical properties; photoacoustic spectroscopy; resistivity; semiconductor growth; single crystals; solar cells; ternary compound; van der Pauw technique; vertical Bridgman technique; Absorption; Crystals; Hall effect; Optical devices; Photonic band gap; Photovoltaic cells; Semiconductor impurities; Solid state circuits; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2001. Canadian Conference on

Conference_Location

Toronto, Ont.

ISSN

0840-7789

Print_ISBN

0-7803-6715-4

Type

conf

DOI

10.1109/CCECE.2001.933752

Filename

933752