DocumentCode
1749143
Title
Incorporation technology of fullerene and conductive properties of fullerite in ion tracks of polymer film
Author
Berdinsky, Alexander S. ; Fink, Dietmar ; Chadderton, Lewis T. ; Krasnoshtanov, Sergey M.
fYear
2001
fDate
2001
Firstpage
109
Lastpage
114
Abstract
We have shown in first test experiments that fullerite can be deposited along etched ion tracks in polymers via simple deposition technology from high concentrated solution of fullerene in toluene. We have tried to deposit semiconducting fullerite along etched in KOH solution ion tracks with several hundred nanometers diameter in polymer foil of 10 μm thickness. It has shown that fullerene was deposited inside the ion tracks thereby the randomly distributed fullerite columns were formed
Keywords
electrical conductivity; etching; fullerenes; ion beam effects; particle tracks; polymer films; KOH etching; conductive properties; fullerene incorporation technology; ion track; polymer film; semiconducting fullerite; Art; Ion beams; Microelectronics; Nanobioscience; Nanoscale devices; Polymer films; Semiconductivity; Semiconductor devices; Solids; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2001. Proceedings. 2nd Annual Siberian Russian Student Workshop on
Conference_Location
Erlagol, Altai
Print_ISBN
5-7782-0347-0
Type
conf
DOI
10.1109/SREDM.2001.939168
Filename
939168
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