• DocumentCode
    1749315
  • Title

    Electron field emission of nanocrystalline diamond films co-doped with boron and nitrogen

  • Author

    Hsu, T. ; Lin, G.M. ; Lin, I.N.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    273
  • Lastpage
    274
  • Abstract
    The effect of nitrogen/boron co-doping on characteristics of chemical vapor deposited diamond films was systematically examined. The electron field emission properties of the diamond films thus obtained are: emission current density Je=1,800 μA/cm2 at (Ea=20 V/μm applied field) and turn-on field E0 =4.4 V/μm, which are pronouncedly better than the pure nitrogen or boron doped diamond films
  • Keywords
    CVD coatings; boron; current density; diamond; electron field emission; elemental semiconductors; nanostructured materials; nitrogen; semiconductor doping; semiconductor growth; semiconductor thin films; C:B,N; chemical vapor deposited films; electron field emission properties; emission current density; nanocrystalline diamond:B,N films; Boron; Chemical vapor deposition; Conductive films; Conductivity; Current density; Electron emission; Materials science and technology; Nitrogen; Semiconductor films; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
  • Conference_Location
    Davis, CA
  • Print_ISBN
    0-7803-7197-6
  • Type

    conf

  • DOI
    10.1109/IVMC.2001.939759
  • Filename
    939759
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1749315