DocumentCode
1749318
Title
Comparative theoretical analysis of emission properties of silicon and diamond
Author
Il´chenko, L.G. ; Il´chenko, V.V. ; Rangelow, I.W.
Author_Institution
Inst. of Surface Chem., Acad. of Sci., Kiev, Ukraine
fYear
2001
fDate
2001
Firstpage
307
Lastpage
308
Abstract
In the present work n-type silicon and diamond are considered on the basis of a theoretical model of the semiconductor´s surface, permitting the correct account of its microscopic structure and its change in the external electric field F
Keywords
diamond; electron field emission; elemental semiconductors; silicon; C; Si; diamond; emission properties; Dielectric constant; Effective mass; Electrons; Lead compounds; Microelectronics; Microscopy; Semiconductor impurities; Semiconductor materials; Silicon; Vacuum technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location
Davis, CA
Print_ISBN
0-7803-7197-6
Type
conf
DOI
10.1109/IVMC.2001.939776
Filename
939776
Link To Document