DocumentCode
1749991
Title
Charge-compensation in barium titanate
Author
Tsur, Y. ; Randall, C.A.
Author_Institution
Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
Volume
1
fYear
2000
fDate
2000
Firstpage
151
Abstract
Different charge-compensation mechanisms of aliovalent dopants on the cation sublattice of BaTiO3 are analyzed. It is argued that for most cases, more than one compensating defect should be considered. The partition between the various defects is a function of the degrees of freedom of the system, if equilibrium can be assumed. On cooling, the system is passed through two different metastable states. In the first one, the metal sublattice is frozen, and includes any metal vacancies that might be present. In the second one, the oxygen vacancies are also frozen into the anion sublattice and only electronic defects can compensate for the total ionic charge. (The aliovalent dopants are compensated in the metastable states by both frozen vacancies and electronic defects). The different options in terms of the overall A/B ratio, the oxygen partial pressure during the sintering and the dopant types and concentrations are outlined. Some important works on this subject are reviewed. The consequences of this model are discussed with examples of technological importance
Keywords
barium compounds; charge compensation; sintering; vacancies (crystal); BaTiO3; aliovalent dopants; barium titanate; charge compensation; electronic defects; metastable states; sintering; vacancies; Barium; Charge carrier processes; Chemical engineering; Chemistry; Doping; Laboratories; Metastasis; Semiconductor process modeling; Temperature; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location
Honolulu, HI
ISSN
1099-4734
Print_ISBN
0-7803-5940-2
Type
conf
DOI
10.1109/ISAF.2000.941531
Filename
941531
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