DocumentCode
175107
Title
A 10–50GHz True-Time-Delay phase shifter with max 3.9% delay variation
Author
Qian Ma ; Leenaerts, D. ; Mahmoudi, R.
Author_Institution
Mixed-Signal Microelectron. Group, Eindhoven Univ. of Technol., Eindhoven, Netherlands
fYear
2014
fDate
1-3 June 2014
Firstpage
83
Lastpage
86
Abstract
A fully integrated passive True Time Delay (TTD) phase shifter with 32ps continuous changing delay time has been realized in a 0.25μm SiGe:C BiCMOS technology. A new TTD architecture is proposed based on broadband matching technique, resulting in less than 4% delay variation over a very large, 10-50GHz frequency span, meanwhile maintaining an input return loss better than 10dB. The measured input 1dB compression point and input IP3 are +15.5dBm and +24.7dBm at 30GHz, respectively. The phase shifter core occupies less than 0.22mm2.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; MMIC phase shifters; bipolar MIMIC; bipolar MMIC; carbon; delay circuits; millimetre wave phase shifters; BiCMOS technology; SiGe:C; TTD phase shifter; broadband matching technique; continuous changing delay time; delay variation; frequency 10 GHz to 50 GHz; fully integrated passive true time delay phase shifter; size 0.25 mum; Broadband communication; Computer architecture; Delays; Impedance; Microprocessors; Phase shifters; Tuning; C BiCMOS technology; Ka-band; Phase Shifter; SiGe; True Time Delay;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits Symposium, 2014 IEEE
Conference_Location
Tampa, FL
ISSN
1529-2517
Print_ISBN
978-1-4799-3862-9
Type
conf
DOI
10.1109/RFIC.2014.6851664
Filename
6851664
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