• DocumentCode
    175107
  • Title

    A 10–50GHz True-Time-Delay phase shifter with max 3.9% delay variation

  • Author

    Qian Ma ; Leenaerts, D. ; Mahmoudi, R.

  • Author_Institution
    Mixed-Signal Microelectron. Group, Eindhoven Univ. of Technol., Eindhoven, Netherlands
  • fYear
    2014
  • fDate
    1-3 June 2014
  • Firstpage
    83
  • Lastpage
    86
  • Abstract
    A fully integrated passive True Time Delay (TTD) phase shifter with 32ps continuous changing delay time has been realized in a 0.25μm SiGe:C BiCMOS technology. A new TTD architecture is proposed based on broadband matching technique, resulting in less than 4% delay variation over a very large, 10-50GHz frequency span, meanwhile maintaining an input return loss better than 10dB. The measured input 1dB compression point and input IP3 are +15.5dBm and +24.7dBm at 30GHz, respectively. The phase shifter core occupies less than 0.22mm2.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; MMIC phase shifters; bipolar MIMIC; bipolar MMIC; carbon; delay circuits; millimetre wave phase shifters; BiCMOS technology; SiGe:C; TTD phase shifter; broadband matching technique; continuous changing delay time; delay variation; frequency 10 GHz to 50 GHz; fully integrated passive true time delay phase shifter; size 0.25 mum; Broadband communication; Computer architecture; Delays; Impedance; Microprocessors; Phase shifters; Tuning; C BiCMOS technology; Ka-band; Phase Shifter; SiGe; True Time Delay;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits Symposium, 2014 IEEE
  • Conference_Location
    Tampa, FL
  • ISSN
    1529-2517
  • Print_ISBN
    978-1-4799-3862-9
  • Type

    conf

  • DOI
    10.1109/RFIC.2014.6851664
  • Filename
    6851664