Technological aspects of development of pixel and strip detectors based on CdTe and CdZnTe

Author

Gostilo, V. ; Ivanov, V. ; Kostenko, S. ; Lisjutin, I. ; Loupilov, A. ; Nenonen, S. ; Sipila, H. ; Valpas, K.

Author_Institution

Baltic Sci. Instrum., Riga, Latvia

Volume

1

fYear

2000

fDate

2000

Firstpage

30773

Abstract

Results on development of technologies for CdZnTe and CdTe crystal processing, photolithography, contact pad manufacture and their wirebonding are presented. Developed technologies were used for fabrication of different types of pixel and strip multidetector arrays. Their topologies and obtained performances are demonstrated. Spectra are presented. Developed technologies provided at room temperature for separate pixels in real switched-on state leakage currents 10-50 pA at a detector bias of 500 V. Interpixel resistivity on developed structures with a gap 50-100 mm was 40-300 GOhm at a voltage 10 V. At optimal temperatures we have obtained a resolution of 2-3% and 14-15% at energies 59.6 and 5.9 keV respectively

Keywords

lead bonding; leakage currents; photolithography; semiconductor counters; semiconductor device manufacture; 10 V; 10 to 50 pA; 293 K; 40 to 300 Gohm; 5.9 keV; 500 V; 59.6 keV; CdTe; CdTe detector; CdZnTe; CdZnTe detector; contact pad manufacture; interpixel resistivity; leakage currents; photolithography; pixel detector; spectra; strip detector; wirebonding; Conductivity; Detectors; Fabrication; Leak detection; Leakage current; Lithography; Manufacturing processes; Strips; Temperature; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2000 IEEE

Conference_Location

Lyon

ISSN

1082-3654

Print_ISBN

0-7803-6503-8

Type

conf

DOI

10.1109/NSSMIC.2000.949053

Filename

949053