• DocumentCode
    1753990
  • Title

    Enabling 18nm-particle detection on Si surfaces by conventional laser scattering

  • Author

    Tamura, Akitake ; Kawamura, Shigeru ; Saito, Misako

  • Author_Institution
    Tokyo Electron Ltd., Nirasaki, Japan
  • fYear
    2010
  • fDate
    18-20 Oct. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    According to ITRS2009, the detection of 18nm particles is required for 2010, but the latest laser scattering wafer inspection system is not capable of detecting particles smaller than 28 nm. Therefore, it is necessary to establish the method of detecting smaller particles. We developed a method to detect particles that are below the detection limit of the particle detection system by depositing SiO2 film on the particles and thus enhancing light scattering intensity. By using this method, we could detect 18nm particles even with conventional particle detection systems with the minimum detection size of 38nm by optimizing film deposition conditions.
  • Keywords
    elemental semiconductors; inspection; light scattering; measurement by laser beam; particle detectors; semiconductor technology; silicon; ITRS2009; Si; SiO2; detection size; film deposition; laser scattering; light scattering intensity; particle detection system; size 18 nm; size 38 nm; wafer inspection system; Atmospheric measurements; Particle measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing (ISSM), 2010 International Symposium on
  • Conference_Location
    Tokyo
  • ISSN
    1523-553X
  • Print_ISBN
    978-1-4577-0392-8
  • Electronic_ISBN
    1523-553X
  • Type

    conf

  • Filename
    5750260