DocumentCode
1753990
Title
Enabling 18nm-particle detection on Si surfaces by conventional laser scattering
Author
Tamura, Akitake ; Kawamura, Shigeru ; Saito, Misako
Author_Institution
Tokyo Electron Ltd., Nirasaki, Japan
fYear
2010
fDate
18-20 Oct. 2010
Firstpage
1
Lastpage
4
Abstract
According to ITRS2009, the detection of 18nm particles is required for 2010, but the latest laser scattering wafer inspection system is not capable of detecting particles smaller than 28 nm. Therefore, it is necessary to establish the method of detecting smaller particles. We developed a method to detect particles that are below the detection limit of the particle detection system by depositing SiO2 film on the particles and thus enhancing light scattering intensity. By using this method, we could detect 18nm particles even with conventional particle detection systems with the minimum detection size of 38nm by optimizing film deposition conditions.
Keywords
elemental semiconductors; inspection; light scattering; measurement by laser beam; particle detectors; semiconductor technology; silicon; ITRS2009; Si; SiO2; detection size; film deposition; laser scattering; light scattering intensity; particle detection system; size 18 nm; size 38 nm; wafer inspection system; Atmospheric measurements; Particle measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location
Tokyo
ISSN
1523-553X
Print_ISBN
978-1-4577-0392-8
Electronic_ISBN
1523-553X
Type
conf
Filename
5750260
Link To Document