300mm wafer thinning and backside passivation compatibility with temporary wafer bonding for 3D stacked IC applications

Author

Jourdain, Anne ; Buisson, Thibault ; Phommahaxay, Alain ; Privett, Mark ; Wallace, Dan ; Sood, Sumant ; Bisson, Peter ; Beyne, Eric ; Travaly, Youssef ; Swinnen, Bart

Author_Institution

Imec vzw, Leuven, Belgium

fYear

2010

fDate

16-18 Nov. 2010

Firstpage

1

Lastpage

4

Abstract

Thin wafer handling has become a very challenging topic of emerging 3D technologies, and temporary wafer bonding to a carrier support wafer is one way to guarantee the required mechanical stability and rigidity to the thin wafer during subsequent backside processing. The temporary bonding approach followed by Imec is based on the adhesive material HT10.10 from Brewer Science (WaferBond^® HT-10.10). The thermal and chemical stability of the temporary adhesive layer has been fully assessed and characterized in a 300mm production line, and for the first time we report on the full integration of thin wafer handling with backside processing on 300mm CMOS wafers.

Keywords

CMOS integrated circuits; adhesive bonding; three-dimensional integrated circuits; wafer bonding; 3D stacked IC; CMOS wafer; adhesive material HT10.10; backside passivation compatibility; carrier support wafer; chemical stability; size 300 mm; temporary wafer bonding; thermal stabiity; thin wafer handling; wafer thinning; Copper; Passivation; Resists; Silicon; Three dimensional displays; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

3D Systems Integration Conference (3DIC), 2010 IEEE International

Conference_Location

Munich

Print_ISBN

978-1-4577-0526-7

Type

conf

DOI

10.1109/3DIC.2010.5751468

Filename

5751468