DocumentCode
1754451
Title
Packageless AlN/ZnO/Si Structure for SAW Devices Applications
Author
Legrani, O. ; Elmazria, O. ; Zhgoon, Sergei ; Pigeat, P. ; Bartasyte, A.
Author_Institution
Inst. Jean Lamour, Univ. de Lorraine, Vandoeuvre, France
Volume
13
Issue
2
fYear
2013
fDate
Feb. 2013
Firstpage
487
Lastpage
491
Abstract
The possibility to perform a packageless structure for acoustic wave sensors applications based on AlN/interdigital transducer/ZnO/Si structure was investigated. The effect of thicknesses of AlN and ZnO thin films on structure performance was simulated by 2-D finite element method. Theoretical predictions were confirmed by in-situ measurements of frequency, insertion loss, and thickness during deposition of AlN layer on ZnO/Si.
Keywords
II-VI semiconductors; aluminium compounds; chemical sensors; finite element analysis; silicon; surface acoustic wave transducers; thin film sensors; wide band gap semiconductors; zinc compounds; 2D finite element method; AlN-ZnO-Si; SAW device applications; acoustic wave sensor applications; in-situ measurements; packageless structure; thin films; Couplings; Films; Silicon; Surface acoustic wave devices; Surface acoustic waves; Zinc oxide; AlN; ZnO; finite element method (FEM); packageless structure; surface acoustic wave (SAW);
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2012.2219692
Filename
6307810
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