Research on some control issues in the Czochralski process of solar grade mono-crystal silicon

Author

Liu Ding ; Zhang Jing

Author_Institution

Xi´an Univ. of Technol., Xi´an, China

fYear

2014

fDate

May 31 2014-June 2 2014

Firstpage

559

Lastpage

564

Abstract

Czochralski (CZ) method based silicon crystal furnace is the main equipment to produce the solar cells silicon material. To meet the technological requirements of the silicon material for the solar photovoltaic industry, this paper introduces the role of mono-crystal silicon in the solar photovoltaic industry, and studies some key control issues in the silicon crystal growth process. Important achievements are obtained in the aspects of diameter measurement and control, heat field modeling and temperature control, design and implementation of the large-scale CUSP magnetic field as well as solid-liquid interface measurement and control etc. Experimental results show that the proposed solutions meet the technological requirements of silicon crystal growth process.

Keywords

crystal growth; mechanical variables control; solar cells; temperature control; CUSP magnetic field; Czochralski process; diameter control; diameter measurement; heat field modeling; silicon crystal furnace; silicon crystal growth process; solar cells silicon material; solar grade monocrystal silicon; solar photovoltaic industry; solid-liquid interface control; solid-liquid interface measurement; temperature control; Crystals; Furnaces; Magnetic field measurement; Magnetic fields; Process control; Silicon; Temperature measurement; CUSP Magnetic Field; CZ Method; Diameter Control; Solid-Liquid Interface Measurement; Thermal Field Modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Control and Decision Conference (2014 CCDC), The 26th Chinese

Conference_Location

Changsha

Print_ISBN

978-1-4799-3707-3

Type

conf

DOI

10.1109/CCDC.2014.6852229

Filename

6852229