DocumentCode
1755765
Title
AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation
Author
Yafune, N. ; Hashimoto, Shuji ; Akita, K. ; Yamamoto, Yusaku ; Tokuda, Hirokuni ; Kuzuhara, Masaaki
Author_Institution
Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan
Volume
50
Issue
3
fYear
2014
fDate
January 30 2014
Firstpage
211
Lastpage
212
Abstract
An AlN/AlGaN high-electron-mobility transistor (HEMT) fabricated on a free-standing AlN substrate is demonstrated. A metal stack, composed of Zr/Al/Mo/Au, was found to show low contact resistivity for source and drain ohmic contacts. The fabricated AlN/AlGaN HEMT exhibited a maximum drain current of 38 mA/mm with a threshold voltage of -3.4 V. Negligible drain current degradation was observed at temperatures from 300 to 573 K, demonstrating that an AlN/AlGaN approach on an AlN substrate is promising for stable high-temperature operation.
Keywords
III-V semiconductors; aluminium compounds; contact resistance; gallium compounds; high electron mobility transistors; ohmic contacts; wide band gap semiconductors; AlN; AlN-AlGaN; HEMTs; drain current degradation; drain ohmic contacts; low contact resistivity; metal stack; source ohmic contacts; stable high-temperature operation; temperature 300 K to 573 K; voltage -3.4 V;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2013.2846
Filename
6731767
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