DocumentCode
1756084
Title
Parallel asymmetric pulse-width modulation converters with same power switches for medium power applications
Author
Bor-Ren Lin ; Kuan-Hao Chen
Author_Institution
Dept. of Electr. Eng., Nat. Yunlin Univ. of Sci. & Technol., Yunlin, Taiwan
Volume
7
Issue
12
fYear
2014
fDate
12 2014
Firstpage
3137
Lastpage
3146
Abstract
A new zero-voltage switching (ZVS) half-bridge converter with three circuit modules is presented in this study to reduce the switching losses of power switches and current stress of passive components for medium power applications. Three circuit modules with the same power switches are connected in parallel at input and output sides. Thus, the switch counts are reduced compared with the parallel half-bridge converter with the same power rating. Each circuit module supplies one-third of load power to output side. Owing to the half-bridge converter leg, the voltage stress of each power switch is clamped at input DC voltage. Three centre-tapped rectifiers are adopted at low voltage side to share load current and reduce the size of magnetic cores. Asymmetric pulse-width modulation is adopted to regulate output voltage at the desired voltage level. Owing to the resonant behaviour by resonant capacitance [or output capacitance of metal-oxide semiconductor field-effect transistors (MOSFETs)] and leakage inductance (or external inductance) at the transition interval, power MOSFETs can be turned on under ZVS. The system analysis, circuit characteristics and design example of the proposed converter are discussed in detail. Finally, experiments with a 1620 W prototype are provided to verify the effectiveness of the proposed converter.
Keywords
PWM power convertors; power MOSFET; power semiconductor switches; rectifiers; zero voltage switching; ZVS half-bridge converter; centre-tapped rectifiers; circuit modules; input DC voltage; leakage inductance; medium power applications; metal-oxide semiconductor field-effect transistors; parallel asymmetric pulse-width modulation converters; parallel half-bridge converter; passive components; power 1620 W; power MOSFET; power switches; resonant capacitance; switching losses; voltage stress; zero-voltage switching half-bridge converter;
fLanguage
English
Journal_Title
Power Electronics, IET
Publisher
iet
ISSN
1755-4535
Type
jour
DOI
10.1049/iet-pel.2014.0020
Filename
6983706
Link To Document