• DocumentCode
    1756123
  • Title

    High-Speed Reconfigurable Circuits for Multirate Systems in SiGe HBT Technology

  • Author

    LeRoy, Mitchell R. ; Raman, Srikumar ; Chu, Michael ; Jin-Woo Kim ; Jong-Ru Guo ; Kuan Zhou ; Chao You ; Clarke, Ryan ; Goda, Bryan ; McDonald, John F.

  • Author_Institution
    Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
  • Volume
    103
  • Issue
    7
  • fYear
    2015
  • fDate
    42186
  • Firstpage
    1181
  • Lastpage
    1196
  • Abstract
    In this paper, we discuss the advantages and opportunities presented by high-speed (> 50 GHz) reconfigurable integrated circuits and how they may drive reconfigurable systems applications, such as software-defined radio, radar, and imaging. We propose silicon-germanium (SiGe) BiCMOS as an example technology that enables ultrafast reconfigurable systems and present several circuit designs based on SiGe heterojunction bipolar transistors (HBTs). We compare circuit designs between generations of IBM´s SiGe process, including a recent 9HP process featuring devices with a cutoff frequency (fT) of 300 GHz. We describe an architecture for an 8-b 80-Gs/s analog-to-digital converter (ADC) and a 48 × 48 cell field programmable gate array (FPGA), which provide powerful solutions for useful functions, such as digital signal processing (DSP) and polyphase filtering. Other circuit concepts are described, including a voltage-controlled oscillator (VCO) with a tuning range of 26 GHz and a high-performance (80 Gb/s) crossbar switch, which provide utility in reconfigurable system applications. Measured results from fabricated implementations of these described systems are presented. We comment on future prospects of these systems and examine an emerging lateral bipolar device (fT 1/4 825 GHz) having 100x less power consumption than conventional vertical HBTs.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; analogue-digital conversion; bipolar integrated circuits; digital signal processing chips; heterojunction bipolar transistors; high-speed integrated circuits; power consumption; semiconductor materials; voltage-controlled oscillators; ADC; DSP; FPGA; IBM silicon-germanium process; SiGe; VCO; analog-to-digital converter; bit rate 80 Gbit/s; circuit design; digital signal processing; field programmable gate array; frequency 26 GHz; frequency 300 GHz; frequency 825 GHz; high-performance crossbar switch; high-speed reconfigurable integrated circuits; imaging; lateral bipolar device; multirate systems; polyphase filtering; power consumption; radar; silicon-germanium BiCMOS; silicon-germanium HBT technology; silicon-germanium heterojunction bipolar transistors; software-defined radio; ultrafast reconfigurable systems; vertical HBT; voltage-controlled oscillator; word length 8 bit; BiCMOS integrated circuits; CMOS integrated circuits; Digital signal processing; Field programmable gate arrays; Heterojunction bipolar transistors; High speed techniques; Performance evaluation; Reconfigurable architectures; Silicon germanium; Analog-to-digital converters (ADCs); BiCMOS integrated circuits; field-programmable gate arrays (FPGAs); heterojunction bipolar transistors (HBTs); voltage-controlled oscillators (VCOs);
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/JPROC.2015.2434818
  • Filename
    7118630