DocumentCode
1756197
Title
Development of Pulse Transfer Circuits for Serially Biased SFQ Circuits Using the Nb 9-Layer 1-
Process
Author
Ehara, K. ; Takahashi, Asami ; Yamanashi, Y. ; Yoshikawa, N.
Author_Institution
Dept. of Electr. & Comput. Eng., Yokohama Nat. Univ., Yokohama, Japan
Volume
23
Issue
3
fYear
2013
fDate
41426
Firstpage
1300504
Lastpage
1300504
Abstract
Serial biasing is a promising technology to reduce the total bias current of single flux quantum (SFQ) circuits. In this technique, each circuit block is placed on separated floating ground planes and biased serially. In this study, we developed a new coupling structure of SFQ pulse transfer circuits between the different ground planes using the Nb 9-layer ISTEC advanced process (ADP2.3). By using thick insulating and shielding layers, the pulse transfer circuit became robust to external magnetic fields with enough bias margins. The high-speed operation of serially biased SFQ circuits was demonstrated by on-chip high-speed tests.
Keywords
coupled circuits; driver circuits; high-speed integrated circuits; integrated circuit testing; niobium; pulse circuits; superconducting integrated circuits; type II superconductors; Nb; Nb 9-layer 1-μm process; circuit block; coupling structure; floating ground planes; high-speed operation; insulating layers; on-chip high-speed tests; pulse transfer circuits; serially biased SFQ circuits; shielding layers; single flux quantum circuits; Couplings; Current measurement; Integrated circuits; Magnetic separation; Niobium; Receivers; Current recycling; inductive coupling; rapid single flux quantum (RSFQ); serial biasing; superconducting integrated circuits;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/TASC.2012.2233535
Filename
6378421
Link To Document