• DocumentCode
    1756197
  • Title

    Development of Pulse Transfer Circuits for Serially Biased SFQ Circuits Using the Nb 9-Layer 1- \\mu\\hbox {m} Process

  • Author

    Ehara, K. ; Takahashi, Asami ; Yamanashi, Y. ; Yoshikawa, N.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Yokohama Nat. Univ., Yokohama, Japan
  • Volume
    23
  • Issue
    3
  • fYear
    2013
  • fDate
    41426
  • Firstpage
    1300504
  • Lastpage
    1300504
  • Abstract
    Serial biasing is a promising technology to reduce the total bias current of single flux quantum (SFQ) circuits. In this technique, each circuit block is placed on separated floating ground planes and biased serially. In this study, we developed a new coupling structure of SFQ pulse transfer circuits between the different ground planes using the Nb 9-layer ISTEC advanced process (ADP2.3). By using thick insulating and shielding layers, the pulse transfer circuit became robust to external magnetic fields with enough bias margins. The high-speed operation of serially biased SFQ circuits was demonstrated by on-chip high-speed tests.
  • Keywords
    coupled circuits; driver circuits; high-speed integrated circuits; integrated circuit testing; niobium; pulse circuits; superconducting integrated circuits; type II superconductors; Nb; Nb 9-layer 1-μm process; circuit block; coupling structure; floating ground planes; high-speed operation; insulating layers; on-chip high-speed tests; pulse transfer circuits; serially biased SFQ circuits; shielding layers; single flux quantum circuits; Couplings; Current measurement; Integrated circuits; Magnetic separation; Niobium; Receivers; Current recycling; inductive coupling; rapid single flux quantum (RSFQ); serial biasing; superconducting integrated circuits;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/TASC.2012.2233535
  • Filename
    6378421