Miscorrelation Between Air Gap Discharge and Human Metal Model Stresses Due to Multi-Finger Turn-On Effect

Author

Yunfeng Xi ; Malobabic, Slavica ; Vashchenko, Vladislav ; Liou, Juin J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA

Volume

14

Issue

3

fYear

2014

fDate

Sept. 2014

Firstpage

864

Lastpage

868

Abstract

Operation of NLDMOS-SCR devices under the human metal model (HMM) and IEC air gap electrostatic discharge (ESD) stresses has been studied based on both the pulsed measurements and mixed-mode simulations. Under the IEC air gap testing, the devices are found to suffer the non-uniform multi-finger turn-on behavior and hence a relatively low passing level, whereas both the IEC contact and HMM stresses do not give rise to such an adversary effect and result in a considerably higher passing level. It is further shown that the non-uniform multi-finger turn-on effect depends on the stress pulse rise time. Such dependence has also been examined and verified using the transmission line pulsing (TLP) technique with rise times ranging from 10 to 40 ns.

Keywords

IEC standards; air gaps; electrostatic discharge; pulse measurement; thyristors; transmission lines; ESD stresses; HMM; IEC air gap testing; NLDMOS-SCR devices; TLP technique; electrostatic discharge stresses; human metal model; mixed-mode simulations; nonuniform multifinger turn-on behavior; passing level; pulsed measurements; stress pulse rise time; time 10 ns to 40 ns; transmission line pulsing technique; Discharges (electric); Electrostatic discharges; Fingers; Hidden Markov models; IEC; IEC standards; Stress; ESD; HMM; IEC; NLDMOS-SCR; mix-mode simulation; non-uniform triggering;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2014.2332432

Filename

6853343