Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

Author

Uren, Michael J. ; Caesar, Markus ; Karboyan, Serge ; Moens, Peter ; Vanmeerbeek, Piet ; Kuball, Martin

Author_Institution

H.H. Wills Phys. Lab., Univ. of Bristol, Bristol, UK

Volume

36

Issue

8

fYear

2015

fDate

Aug. 2015

Firstpage

826

Lastpage

828

Abstract

It is shown by simulation supported by experiment that a reduced surface field effect, associated with compensated deep acceptors, can occur in carbon doped GaN-on-Si power switching AlGaN/GaN transistors, provided there is a vertical leakage path from the 2DEG to the carbon-doped layer. Simulations show that this effect is not present in devices using iron-doped GaN buffers explaining the higher voltage capability of carbon-doped devices.

Keywords

III-V semiconductors; aluminium compounds; buffer circuits; carbon; electric fields; elemental semiconductors; gallium compounds; high electron mobility transistors; iron; power transistors; semiconductor doping; silicon; switching circuits; wide band gap semiconductors; 2DEG; AlGaN-GaN; C-doped AlGaN/GaN; Si; Si high electron mobility transistors; carbon doped GaN-on-Si power switching transistors; carbon-doped devices; carbon-doped layer; deep acceptors; electric field reduction; iron-doped GaN buffer; reduced surface field effect; Aluminum gallium nitride; Gallium nitride; HEMTs; Iron; Logic gates; MODFETs; Wide band gap semiconductors; Field effect transistors; HEMTs; microwave transistors; power transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2442293

Filename

7119565