DocumentCode
1758259
Title
Introduction to the Special Section on the 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Author
Wang, Aiping
Author_Institution
Department of Electrical Engineering, University of California, Riverside, CA, USA
Volume
49
Issue
9
fYear
2014
fDate
Sept. 2014
Firstpage
1875
Lastpage
1875
Abstract
The five papers in this special section were presented at the 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting that was held from September 30th to October 3rd in Bordeaux, France. The five papers selected reflect the recent advances in integrated circuit designs implemented in BiCMOS and SiGe technologies.
Keywords
BiCMOS integrated circuits; Integrated circuit synthesis; Meetings; Signal resolution; Silicon germanium; Special issues and sections;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2014.2317852
Filename
6805227
Link To Document