Narrow-Width Effect on High-Frequency Performance and RF Noise of Sub-40-nm Multifinger nMOSFETs and pMOSFETs

Author

Kuo-Liang Yeh ; Jyh-Chyurn Guo

Author_Institution

Inst. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

60

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

109

Lastpage

116

Abstract

The impact of narrow-width effects on high-frequency performance like fT, f_MAX, and RF noise parameters, such as NF_min and Rn, in sub-40-nm multifinger CMOS devices is investigated in this paper. Narrow-oxide-diffusion (OD) MOSFET with smaller finger width and larger finger number can achieve lower Rg and higher f_MAX. However, these narrow-OD devices suffer fT degradation and higher NF_min, even with the advantage of lower Rg. The mechanisms responsible for the tradeoff between different parameters will be presented to provide an important guideline of multifinger MOSFET layout for RF circuit design using nanoscale CMOS technology.

Keywords

CMOS integrated circuits; MOSFET; network synthesis; radiofrequency integrated circuits; semiconductor device manufacture; semiconductor device models; semiconductor device noise; CMOS devices; MOSFET layout; RF circuit design; RF noise parameters; high-frequency performance; nMOSFET; nanoscale CMOS technology; narrow-oxide-diffusion MOSFET; narrow-width effect; pMOSFET; size 40 nm; Capacitance; Degradation; Logic gates; MOS devices; Noise; Noise measurement; Radio frequency; $NF_{min}$; $R_{g}$; $f_{T}$; $f_{rm MAX}$; RF noise; multifinger; nanoscale CMOS; narrow width;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2228196

Filename

6381483