Modeling Channel Thermal Noise and Induced Gate Noise in Junctionless FETs

Author

Jazaeri, Farzan ; Sallese, Jean-Michel

Author_Institution

Swiss Fed. Inst. of Technol. in Lausanne, Lausanne, Switzerland

Volume

62

Issue

8

fYear

2015

fDate

Aug. 2015

Firstpage

2593

Lastpage

2597

Abstract

This paper presents analytical expressions for channel noise, induced gate noise (IGN), and cross-correlation noise in a long-channel junctionless (JL) double-gate MOSFET. The analytical relationships, which have been derived from a coherent charge-based model, are validated with technology computer-aided design simulations, and the figures of merit have been compared with the inversion mode FETs. For a given current, we found that the channel thermal noise is very similar for both architectures, whereas the IGN is slightly decreased in the JL FETs.

Keywords

MOSFET; field effect transistors; semiconductor device models; semiconductor device noise; thermal noise; analytical expressions; channel noise; channel thermal noise; coherent charge-based model; computer-aided design simulations; cross-correlation noise; induced gate noise; junctionless FET; long-channel junctionless double-gate MOSFET; Logic gates; MOSFET; Mobile communication; Noise; Thermal noise; Double gate (DG) MOSFET; induced gate noise (IGN); junctionless (JL); thermal noise; thermal noise.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2437954

Filename

7120106