DocumentCode

1760749

Title

Enhanced Flux Pinning and Critical Current Density of $\\hbox {BaZrO}_{3}$ -Doped $\\hbox {Y}_{0.75} \\hbox</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Yuanqing Chen ; Fangyuan Yan ; Lihua Jin ; Gaoyang Zhao</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Sch. of Mater. Sci. & Technol., Xi´an Univ. of Technol., Xi´an, China</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>23</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>6</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2013</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fDate</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Dec. 2013</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>8003105</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>8003105</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Y<sub>0.75</sub> Gd<sub>0.25</sub> Ba<sub>2</sub> Cu<sub>3</sub> O<sub>7- x</sub> (YGBCO) films with BaZrO<sub>3</sub> (BZO) inclusions as pinning centers were prepared on LaAlO<sub>3</sub> (00 l) substrates by metal-organic deposition via introducing zirconium (IV) acetylacetonate into the advanced low-fluorine YGBCO precursor solution. The BZO defects in the YGBCO film were found to induce the formation of a-oriented YGBCO grains on the film surface. An annealing process at a high temperature of 805 °C can completely eliminate the a-axis grains. The introduction of BZO defects in c-oriented YGBCO film can improve the film critical current density (J<sub>c</sub>) and flux pinning of the films. Through the introduction of BZO nanostructure, the J<sub>c</sub> of the YGBCO film processed at 805 °C was improved from 3 to 9 MA/cm<sup>2</sup> at 77 K and 0 T. The flux pinning force density Fp also reached a high value of 38 GN/m<sup>3</sup> at 65 K and 0.5-1 T.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>MOCVD; annealing; barium compounds; critical current density (superconductivity); flux pinning; gadolinium compounds; high-temperature superconductors; inclusions; nanostructured materials; superconducting thin films; yttrium compounds; BZO inclusion defects; BZO nanostructure; LaAlO<sub>3</sub>; LaAlO<sub>3</sub> substrates; Y<sub>0.75</sub>Gd<sub>0.25</sub>Ba<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub>:BaZrO<sub>3</sub>; a-oriented YGBCO grains; advanced low-fluorine precursor solution; advanced low-fluorine solution; critical current density; enhanced flux pinning; film surface; flux pinning force density; high-temperature annealing; magnetic flux density 0 T to 1 T; metalorganic chemical vapor deposition; pinning center; superconducting thin films; temperature 65 K; temperature 77 K; temperature 805 degC; zirconium acetylacetonate; Annealing; Conductors; Educational institutions; X-ray scattering; Yttrium barium copper oxide; <formula formulatype=$ $hbox{BaZrO}_{3}$ (BZO); flux pinning; low-fluorine solution; superconductor;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/TASC.2013.2262656

Filename

6585776

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1760749