High-power in-phase coherently coupled VCSEL array based on proton implantation

Author

Meng Xun ; Chen Xu ; Yiyang Xie ; Yanxu Zhu ; Mingming Mao ; Kun Xu ; Jun Wang ; Jie Liu ; Hongda Chen

Author_Institution

Key Lab. of Optoelectron. Technol., Beijing Univ. of Technol., Beijing, China

Volume

50

Issue

15

fYear

2014

fDate

July 17 2014

Firstpage

1085

Lastpage

1086

Abstract

Three-element in-phase coherently coupled arrays of vertical cavity surface-emitting lasers (VCSELs) were fabricated using proton implantation. The arrays show excellent beam quality with a far-field divergence of 4°, while maintaining a stable in-phase mode until a maximum output power of 4 mW under continuous-wave condition. The process for the arrays is simple and the cost is low.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser cavity resonators; laser modes; optical fabrication; quantum well lasers; semiconductor laser arrays; semiconductor quantum wells; surface emitting lasers; GaAs-Al_0.3Ga_0.7As; GaAs-Al_0.3Ga_0.7As quantum wells; beam quality; continuous-wave conditions; far-field divergence; high-power in-phase coherently coupled VCSEL array; output power; power 4 mW; proton implantation; stable in-phase mode; three-element in-phase coherently coupled arrays; vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2014.1298

Filename

6856356