Mid-IR Optical and Nonlinear Properties of Germanium on Silicon Optical Waveguides

Author

De Leonardis, Francesco ; Troia, Benedetto ; Passaro, Vittorio M. N.

Author_Institution

Dept. of Electron., Politec. di Bari, Bari, Italy

Volume

32

Issue

22

fYear

2014

fDate

Nov.15, 15 2014

Firstpage

4349

Lastpage

4359

Abstract

The influence of Germanium-on-Silicon waveguide geometries on single-mode and multimode operations as well as on zero birefringence conditions has been deeply investigated in the mid infrared spectrum. The design equations to estimate the single mode conditions have been carried out and interpolated by exponential functions. Moreover, the group velocity dispersion and third-order dispersion have been investigated in the range 3-6 μm as a function of various waveguide geometries. Finally, nonlinear properties, for instance the modal Raman gain, have been investigated, comparing with Silicon-on-Insulator waveguides. The set of results identifies accurate guidelines for the design of these optical waveguides for several applications.

Keywords

elemental semiconductors; germanium; infrared spectra; nonlinear optics; optical dispersion; optical waveguides; silicon; Ge-Si; exponential functions; germanium-on-silicon optical waveguide geometries; group velocity dispersion; mid infrared spectrum; mid-IR optical properties; modal Raman gain; multimode operations; nonlinear properties; single-mode operations; third-order dispersion; wavelength 3 mum to 6 mum; zero birefringence conditions; Finite element analysis; Optical polarization; Optical refraction; Optical variables control; Optical waveguides; Photonics; Silicon; Germanium; integrated optics; nonlinear optics; optical waveguides;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2014.2339101

Filename

6857319