• DocumentCode
    1762227
  • Title

    Sheer power

  • Author

    Hosoda, T. ; Liang, Robert ; Kipshidze, G. ; Shterengas, L. ; Belenky, G.

  • Volume
    49
  • Issue
    10
  • fYear
    2013
  • fDate
    May 9 2013
  • Firstpage
    632
  • Lastpage
    632
  • Abstract
    Researchers at the State University of New York have used inductively coupled plasma (ICP) reactive ion etching (RIE) to manufacture a ridge waveguide based diode laser. The result was record-breaking 37 mW continuous-wave operation at room temperature for micrometre wavelengths. In the work presented in this issue of Electronics Letters, the etching was, said Hosoda, “stopped in AlGaAsSb cladding layer to minimise internal optical loss due to overlap of optical field with metal layers, which was not possible with wet etching techniques.”
  • Keywords
    ridge waveguides; semiconductor lasers; sputter etching; waveguide lasers; State University of New York; continuous-wave operation; inductively coupled plasma; micrometre wavelengths; power 37 mW; reactive ion etching; ridge waveguide based diode laser; sheer power;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2013.1435
  • Filename
    6528794