DocumentCode
1762227
Title
Sheer power
Author
Hosoda, T. ; Liang, Robert ; Kipshidze, G. ; Shterengas, L. ; Belenky, G.
Volume
49
Issue
10
fYear
2013
fDate
May 9 2013
Firstpage
632
Lastpage
632
Abstract
Researchers at the State University of New York have used inductively coupled plasma (ICP) reactive ion etching (RIE) to manufacture a ridge waveguide based diode laser. The result was record-breaking 37 mW continuous-wave operation at room temperature for micrometre wavelengths. In the work presented in this issue of Electronics Letters, the etching was, said Hosoda, “stopped in AlGaAsSb cladding layer to minimise internal optical loss due to overlap of optical field with metal layers, which was not possible with wet etching techniques.”
Keywords
ridge waveguides; semiconductor lasers; sputter etching; waveguide lasers; State University of New York; continuous-wave operation; inductively coupled plasma; micrometre wavelengths; power 37 mW; reactive ion etching; ridge waveguide based diode laser; sheer power;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2013.1435
Filename
6528794
Link To Document