Highly Sensitive Photodetector Using Ultra-High-Density 1.5-μm Quantum Dots for Advanced Optical Fiber Communications

Author

Umezawa, Toshimasa ; Akahane, Kouichi ; Yamamoto, Naoji ; Kanno, Atsushi ; Kawanishi, Tetsuyas

Author_Institution

Photonics Devices Res. Lab., Nat. Inst. of Inf. & Commun. Technol., Tokyo, Japan

Volume

20

Issue

6

fYear

2014

fDate

Nov.-Dec. 2014

Firstpage

147

Lastpage

153

Abstract

We have fabricated a high-density 1.5-μm quantum dot photodetector for advanced optical fiber communications and have found unique optical properties, including avalanche multiplication. The structure of the absorption layer had stacked InAs/InGaAlAs layers with a high density of 1 × 10¹² cm^-2, which consisted of strained 1.5-μm InAs quantum dots and a strain compensation layer of InGaAlAs. A three times larger absorption coefficient than the InGaAs layer, an avalanche multiplication effect, and a low dark current are reported with InAs quantum dot conditions.

Keywords

III-V semiconductors; absorption coefficients; aluminium compounds; gallium arsenide; indium compounds; internal stresses; optical fibre communication; photodetectors; semiconductor quantum dots; InAs-InGaAlAs; absorption coefficient; absorption layer; avalanche multiplication; dark current; highly sensitive photodetector; optical fiber communications; strain compensation layer; ultra-high-density quantum dots; wavelength 1.5 mum; Absorption; Dark current; Electric fields; Indium gallium arsenide; Photodetectors; Quantum dot lasers; Quantum dots; Avalanche photodiodes; optical fiber communications; photodetectors; quantum dots (QDs);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2014.2321288

Filename

6808407