Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament

Author

Haitao Sun ; Hangbing Lv ; Qi Liu ; Shibing Long ; Ming Wang ; Hongwei Xie ; Xiaoyu Liu ; Xiaoyi Yang ; Jiebin Niu ; Ming Liu

Author_Institution

Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Inst. of Microelectron., Beijing, China

Volume

34

Issue

7

fYear

2013

fDate

41456

Firstpage

873

Lastpage

875

Abstract

Resistive switching memory with low switching current is critical for low-power application. In this letter, we successfully demonstrated a four-terminal resistive RAM device with ultra-low switching current. The device is SET by one pair of electrodes and RESET by the other. The rupture process of conductive filament can be resulted from electrochemical reaction dominated by the lateral electric field. Therefore, during RESET process, no current flows through the filament, leading to an ultra-low switching current.

Keywords

conducting materials; dissolving; electrochemical analysis; electrochemical electrodes; low-power electronics; random-access storage; switching circuits; RESET current process; RRAM; conducting filament; data retention; electrochemical reaction; electrode; four-terminal resistive RAM device; lateral dissolution; lateral electric held; low-power application; resistive switching memory; rupture process; ultralow switching current; Conductive filament; low power; planar structure; resistive random access memory (RRAM); side-RESET;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2261795

Filename

6529145