• DocumentCode
    1763248
  • Title

    Synergistic Reliability and Yield Enhancement Techniques for Embedded SRAMs

  • Author

    Lu, Shyue-Kung ; Huang, Huan-Hua ; Huang, Jiun-Lang ; Ning, Pony

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
  • Volume
    32
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    165
  • Lastpage
    169
  • Abstract
    Single isolated fault (SIF) stands for about 60%-70% of the total number of defects and is rather redundancy hungry since a spare row or a column is required for repairing each SIF. Therefore, manufacturing yield will decrease if we do not allocate sufficient spare resources. In this paper, instead of the traditional fault replacement techniques, synergistic techniques that integrate both fault replacement and fault masking techniques are proposed. With our approaches, SIFs are masked instead of the traditional replacement for repairing. For other minor fault types (e.g., faulty rows and faulty columns), the fault replacement technique is used as usual. According to simulation results, repair rates can be improved significantly. The proposed techniques can be integrated with the conventional built-in self-repair with nearly negligible hardware overhead.
  • Keywords
    SRAM chips; embedded systems; fault diagnosis; reliability; SIF; embedded SRAM; fault replacement; single isolated fault; synergistic reliability; yield enhancement; Arrays; Built-in self-test; Circuit faults; Hardware; Maintenance engineering; Redundancy; Embedded memory; reliability; repair; yield;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/TCAD.2012.2210420
  • Filename
    6387702