• DocumentCode
    1763420
  • Title

    High-Temperature Hardware: Development of a 10-kW High-Temperature, High-Power-Density Three-Phase ac-dc-ac SiC Converter

  • Author

    Puqi Ning ; Di Zhang ; Rixin Lai ; Dong Jiang ; Wang, F. ; Boroyevich, Dushan ; Burgos, Rolando ; Karimi, Kamyab ; Immanuel, V.D. ; Solodovnik, E.V.

  • Author_Institution
    Nat. Transp. Res. Center, Oak Ridge Nat. Lab., Knoxville, TN, USA
  • Volume
    7
  • Issue
    1
  • fYear
    2013
  • fDate
    41334
  • Firstpage
    6
  • Lastpage
    17
  • Abstract
    This article presents the development and experimental performance of a 10-W, all-silicon carbide (SiC), 250 °C junction temperature, high-powerdensity, three-phase ac-dc-ac converter. The electromagnetic interference filter, thermal system, high-temperature package, and gate drive design are discussed in detail. Tests confirming the feasibility and validating the theoretical basis of the prototype converter system are described. Over the last 20 years, advances in industrial and research efforts in electronic power conversion have steadily been moving toward higher power densities, which has resulted in improvements in converter system performance; reductions in physical size; and reductions in mass, weight, and cost. However, this pushes the limits of the existing control, packaging, and thermal management technology for power converter systems.
  • Keywords
    AC-DC power convertors; DC-AC power convertors; electromagnetic interference; high-temperature electronics; power filters; SiC; electromagnetic interference filter; electronic power conversion; gate drive design; high-power-density three-phase AC-DC-AC converter; high-temperature hardware; high-temperature package; high-temperature three-phase AC-DC-AC converter; power 10 kW; power converter systems; power density; prototype converter system; temperature 250 degC; thermal management technology; thermal system; three-phase AC-DC-AC converter; Electromagnetic interference; Electronic packaging thermal management; High-temperature techniques; Logic gates; Power conversion; Research and development; Silicon carbide;
  • fLanguage
    English
  • Journal_Title
    Industrial Electronics Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1932-4529
  • Type

    jour

  • DOI
    10.1109/MIE.2012.2231729
  • Filename
    6482290