• DocumentCode
    1764290
  • Title

    Enhanced Field Emission of {\\rm TiO}_{2} Nanowires With UV Illumination

  • Author

    Sin Hui Wang ; Tsung Ying Tsai ; Shoou Jinn Chang ; Wen Yin Weng ; Sheng Po Chang ; Cheng Liang Hsu

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    35
  • Issue
    1
  • fYear
    2014
  • fDate
    Jan. 2014
  • Firstpage
    123
  • Lastpage
    125
  • Abstract
    TiO2 nanowires with rutile structures on a SiO2/Si substrate were grown by thermal evaporation. A field-emission property of the low turn-on field was reduced to 3.5 and 2.6 V/μm under UVA in 10 min and UVC in 25 min. The wavelength of UVC was higher than the TiO2 band-gap, so the electrons more easily tunneled to the vacuum level and generated excess heat that lowered the turn-on field emission from under UVA. The work function of samples that had been exposed to UVA for 10 min and UVC for 25 min were reduced to 3.10 and 2.02 eV, respectively.
  • Keywords
    field emission; nanowires; titanium compounds; SiO2-Si; TiO2; UV Illumination; band-gap; enhanced field emission; low turn-on field; nanowires; thermal evaporation; time 10 min; time 25 min; vacuum level; Heating; Iron; Lighting; Nanowires; Silicon; Substrates; Zinc oxide; ${rm TiO}_{2}$ nanowires; UV illumination; filed electron emission;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2287893
  • Filename
    6670682
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1764290