• DocumentCode
    1765500
  • Title

    Nanoscale rolled-up InAs quantum dot tube photodetector

  • Author

    Dastjerdi, M.H.T. ; Mi, Z.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
  • Volume
    50
  • Issue
    9
  • fYear
    2014
  • fDate
    April 24 2014
  • Firstpage
    680
  • Lastpage
    682
  • Abstract
    The first demonstration of a rolled-up InAs quantum dot tube photodetector is reported, which is fabricated by the selective release of self-organised InAs/GaAs quantum dot heterostructures from the host substrate. The device exhibits a responsivity of ~66 mA/W and an external quantum efficiency of ~8% under 1064 nm excitation at 300 K.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; nanofabrication; nanosensors; photodetectors; semiconductor quantum dots; InAs-GaAs; host substrate; nanoscale rolled-up quantum dot tube photodetector; self-organised quantum dot heterostructures; size 1064 nm; temperature 30 K;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2013.4070
  • Filename
    6809292
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1765500