Correlation Between TLP, HMM, and System-Level ESD Pulses for Cu Metallization

Author

Xi, Yan ; Malobabic, Slavica ; Vashchenko, Vladislav ; Liou, Juin

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA

Volume

14

Issue

1

fYear

2014

fDate

41699

Firstpage

446

Lastpage

450

Abstract

Correlation factors between different ESD pulse types for different back-end-of-line (BEOL) metal-line topologies have been studied to support system-level on-chip ESD design. The component level (HMM, HBM, and TLP on a wafer) and system-level (IEC gun contact on package) ESD stresses were correlated followed by extraction of correlation factors between the IEC/HMM and TLP, as well as the HBM and TLP supported by analytical approximation. The major conclusions were verified using the thermal coupled mixed-mode simulation analysis.

Keywords

copper; electrostatic discharge; integrated circuit metallisation; integrated circuit reliability; BEOL; ESD pulses; ESD stresses; HMM; TLP; back-end-of-line metal-line topology; component level correlation factors; metallization; thermal coupled mixed-mode simulation analysis; transmission line pulsing; Correlation; Electrostatic discharges; Hidden Markov models; IEC; Metals; Stress; Topology; Back end of line (BEOL); ESD; IEC system level;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2013.2292039

Filename

6671409