• DocumentCode
    1766528
  • Title

    Partial discharges in SF6 gas filled void under standard aperiodic and oscillating switching impulses

  • Author

    Ming Ren ; Ming Dong ; Aici Qiu

  • Author_Institution
    State Key Lab. of Electr. Insulation for Power Equip., Xi´an Jiaotong Univ., Xi´an, China
  • Volume
    21
  • Issue
    1
  • fYear
    2014
  • fDate
    41671
  • Firstpage
    262
  • Lastpage
    272
  • Abstract
    Partial discharges (PDs) in the void filled with SF6 gas were investigated under IEC60060-3 standard aperiodic switching impulse (SI) and oscillating switching impulse (OSI). Some single discharges and discharge sequences with different characteristics were detected. A theoretic voltage-time lag (V-t) curve of the first discharges was proposed and proved to be effective in analyzing the occurrences of the first discharge by comparing the calculated V-t curve and experimental V-t point distribution under test situations. The PD activity in terms of the discharge magnitude and number had significantly associations with the gas pressure in the void and the void shape (dimension ratios). Furthermore, a hypothetical physical model with charge memory effect was proposed to interpret the mechanisms underlying the different PDs in sequence under the two impulses, by which the simulation was carried out, showing a roughly consistency with the measured distribution.
  • Keywords
    delays; partial discharges; IEC60060-3 standard aperiodic switching impulse; calculated V-t curve; discharge magnitude; discharge sequences; experimental V-t point distribution; hypothetical physical model; oscillating switching impulses; partial discharges; single discharges; Discharges (electric); Electric fields; Open systems; Partial discharges; Silicon; Standards; Sulfur hexafluoride; Partial discharge; SF6; fault diagnosis; oscillating impulse; void defects;
  • fLanguage
    English
  • Journal_Title
    Dielectrics and Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1070-9878
  • Type

    jour

  • DOI
    10.1109/TDEI.2013.004093
  • Filename
    6740749