DocumentCode
1767016
Title
X-band 10W MMIC high-gain power amplifier with up to 60% PAE
Author
Sardin, David ; Reveyrand, Tibault ; Popovic, Zoya
Author_Institution
Dept. of Electr., Comput., & Energy Eng. (ECEE), Univ. of Colorado at Boulder, Boulder, CO, USA
fYear
2014
fDate
6-9 Oct. 2014
Firstpage
1337
Lastpage
1340
Abstract
This paper describes a power amplifier operating at X-band demonstrating 61% power added efficiency (PAE) at 10 GHz associated with 14W output power in CW mode. The design uses a 0.15μm GaN 3MI process from TriQuint™. The devices operate at a peak power density of 3.8W/mm at 10 GHz with a PAE higher than 48% over a 500-MHz bandwidth. The two-stage MMIC PA has a saturated gain of 19 dB at peak efficiency. The total size of the chip is 9.2mm2.
Keywords
III-V semiconductors; MMIC power amplifiers; gallium compounds; wide band gap semiconductors; CW mode; GaN; PAE; TriQuint; X-band MMIC high-gain power amplifier; frequency 10 GHz; gain 19 dB; power 10 W; power 14 W; power added efficiency; power density; size 0.15 mum; size 9.2 mm; Gain; Gain measurement; Gallium nitride; Integrated circuit modeling; MMICs; Power measurement; Temperature measurement; Gallium Nitride; MMIC; Power Amplifiers; X-band; high efficiency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (EuMC), 2014 44th European
Conference_Location
Rome
Type
conf
DOI
10.1109/EuMC.2014.6986691
Filename
6986691
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