5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications

Author

Xin Yang ; Sugiura, Tsuyoshi ; Otani, Norihisa ; Murakami, Tadamasa ; Otobe, Eiichiro ; Yoshimasu, Toshihiko

Author_Institution

Grad. Sch. of Inf., Waseda Univ., Kitakyushu, Japan

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

1372

Lastpage

1375

Abstract

This paper presents a highly linear 5-GHz band power amplifier IC with integrated novel CMOS active bias circuit in SiGe BiCMOS technology for wireless LAN applications. The power amplifier IC consists of three-stage amplifier, the CMOS active bias circuit for linearizing SiGe HBT and all matching circuits. The power amplifier IC has exhibited a measured output power of 17.0 dBm, an EVM of 0.9 % and a dc current consumption of 284 mA under 54 Mbps OFDM signal at 5.4 GHz.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC power amplifiers; bipolar transistor circuits; field effect MMIC; heterojunction bipolar transistors; semiconductor materials; wireless LAN; BiCMOS technology; CMOS active bias circuit; HBT linear power amplifier IC; OFDM signal; SiGe; WLAN; bit rate 54 Mbit/s; current 284 mA; dc current consumption; frequency 5 GHz; frequency 5.4 GHz; matching circuits; three-stage amplifier; CMOS integrated circuits; Heterojunction bipolar transistors; OFDM; Power amplifiers; Silicon germanium; Wireless LAN; CMOS active bias circuit; Linear power amplifier; SiGe BiCMOS; WLAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2014 44th European

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMC.2014.6986700

Filename

6986700