Hybrid LNAs with SiGe HBTs on 7th generation BiCMOS process

Author

Bhaumik, Saswata ; bij de Vaate, Jan Geralt

Author_Institution

Central R&D, NXP Semiconduct ors, Nijmegen, Netherlands

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

1388

Lastpage

1391

Abstract

Recent advancements in SiGe BiCMOS technology has drawn attention from RF designers in the field of satellite communication and science applications. In this paper two ultra-low noise amplifiers for both room temperature and cryogenic temperature operations in astrophysics application are demonstrated. The LNAs are designed with packaged SiGe:C HBTs from 7^th generation QUBiC4 process of NXP Semiconductors. LNA1 has small signal gain of over 20dB with average noise temperature of 77Kelvin from 0.5GHz to 2.5GHz. LNA2 has small signal gain of over 20dB and noise temperature below 60Kelvin from 0.5GHz to 3GHz. Average noise temperature in the same frequency range is 42Kelvin. Cryogenic noise temperature (at 22Kelvin) of LNA1 at 0.5GHz and 2.5GHz are 9Kelvin and 15Kelvin. LNA2 has 4Kelvin and 8Kelvin cryogenic noise temperature at 0.5GHz and 3GHz respectively with an average of 8.1Kelvin.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; low noise amplifiers; BiCMOS process; HBT; SiGe; astrophysics application; cryogenic temperature; frequency 0.5 GHz to 2.5 GHz; frequency 0.5 GHz to 3 GHz; hybrid LNA; noise temperature; room temperature; temperature 42 K; temperature 77 K; ultra low noise amplifiers; Arrays; Cryogenics; Current measurement; Heterojunction bipolar transistors; Noise; Silicon germanium; BiCMOS; HBT; Low noise amplifier; SiGe; cryogenic;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2014 44th European

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMC.2014.6986704

Filename

6986704