A scalable HEMT noise model based on FW-EM analyses

Author

Nalli, Andrea ; Raffo, Antonio ; Vannini, Giorgio ; D´Angelo, Sara ; Resca, Davide ; Scappaviva, Francesco ; Crupi, Giovanni ; Salvo, Giuseppe ; Caddemi, Alina

Author_Institution

Dept. of Eng., Univ. of Ferrara, Ferrara, Italy

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

1420

Lastpage

1423

Abstract

A scalable HEMT noise model has been developed, based on a lumped parasitic network extracted analytically through full-wave electromagnetic simulations and a scalable black-box representation of the intrinsic noise and AC response of the device. The analytical extraction of the lumped parasitic network is extensively explained, as well as the intrinsic model identification. The model prediction capability, in terms of S-parameters and noise performance, has been validated through the scaling of two different HEMTs.

Keywords

high electron mobility transistors; lumped parameter networks; semiconductor device models; semiconductor device noise; AC response; FW-EM analyses; S-parameters; full-wave electromagnetic simulations; intrinsic model identification; intrinsic noise; lumped parasitic network analytical extraction; noise performance; scalable HEMT noise model; scalable black-box representation; Correlation; Gallium nitride; HEMTs; Integrated circuit modeling; Layout; Noise; Semiconductor device modeling; low-noise amplifiers; semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2014 44th European

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMC.2014.6986712

Filename

6986712