Wideband high power high efficiency linear GaN power amplifier for cognitive radio application

Author

Demenitroux, W. ; Mandica, L. ; Richardeau, C. ; Gerfault, B. ; Berthou, N. ; Grandgeorge, P.

Author_Institution

Thales Commun. & Security, Cholet, France

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

1564

Lastpage

1567

Abstract

This paper describes a linear, high efficient, high power push-pull GaN amplifier in the VHF-UHF band. This PA shows an efficiency of 60-55% from 10 MHz to 650 MHz, for an output power of 100W and a compressed gain of 19,5 +/-1.5 dB. By reducing the drain voltage to 30V, the efficiency is 70-60 with an output power of 47 dBm and a power gain of 18,5 +/-1.5 dB. Moreover, the measured EVM is less than 2% for an efficiency about 40% and an output power from 0 dBm to 45 dBm using a 64-QAM modulation at 50V. Nevertheless, the record efficiency of 60% have been measured on a 3pi/8 PSK (EDGE) digital modulation with an EVM <; 2.5%, for a tunable output power from 42 to 48 dBm.

Keywords

III-V semiconductors; UHF power amplifiers; VHF amplifiers; cognitive radio; gallium compounds; quadrature amplitude modulation; wide band gap semiconductors; wideband amplifiers; 64-QAM modulation; EVM; GaN; PSK EDGE digital modulation; VHF-UHF band; cognitive radio application; efficiency 60 percent to 55 percent; efficiency 70 percent to 60 percent; power 100 W; voltage 30 V; voltage 50 V; wideband high power high efficiency linear GaN power amplifier; Bandwidth; Digital modulation; Gallium nitride; Linearity; Power amplifiers; Power generation; ACPR; Cognitive Radio; EVM; GaN; Power amplifier; linearity; push-pull;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2014 44th European

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMC.2014.6986749

Filename

6986749