Research on carrier injection efficiency of SiGe-OI electro-optic modulator

Author

Song Feng ; Ren-ke Jiang ; Yong Gao

Author_Institution

Sch. of Sci., Xi´an Polytech. Univ., Xian, China

fYear

2014

fDate

9-10 Nov. 2014

Firstpage

1

Lastpage

4

Abstract

Based on SiGe-OI (Silicon Germanium on Insulator) material, SiGe-OI electro-optic modulator is established, and PIN electrical modulation structure has been researched. The carrier injection concentration of electro-optical modulator with structure parameters, including the doping concentration of active region, the width of active region, the width between active region and waveguide, Ge content and the other parameters are analyzed, and the device structure parameters are optimized. Compared with SOI (Silicon on Insulator) electro-optic modulator injection concentration, SiGe-OI electro-optic modulator has higher carrier injection efficiency at the same modulation conditions. Accordingly, modulation voltage and modulation power can be effectively reduced.

Keywords

Ge-Si alloys; doping profiles; electro-optical modulation; integrated optics; integrated optoelectronics; optical waveguides; semiconductor-insulator boundaries; PIN electrical modulation; SiGe; SiGe-OI electrooptic modulator; active region width; carrier injection concentration; carrier injection efficiency; device structure parameters; doping concentration; modulation power; modulation voltage; optimization; silicon germanium-on-insulator; waveguide; Charge carrier processes; Doping; Electrooptic effects; Electrooptic modulators; Electrooptical waveguides; Optoelectronic devices; PIN structure; SiGe-OI; carrier concentration; electro-optic modulator;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communications and Networks (ICOCN), 2014 13th International Conference on

Conference_Location

Suzhou

Type

conf

DOI

10.1109/ICOCN.2014.6987152

Filename

6987152