• DocumentCode
    1767879
  • Title

    Semiconductor Lasers on Silicon

  • Author

    Bowers, John E.

  • Author_Institution
    Univ. of California, Santa Barbara, Santa Barbara, CA, USA
  • fYear
    2014
  • fDate
    7-10 Sept. 2014
  • Firstpage
    29
  • Lastpage
    29
  • Abstract
    Recent work has focused on the epitaxial growth of III-V layers on silicon using intermediate buffer layers, typically Ge and strained superlattices, to minimize dislocations propagating into the active region. The use of quantum dot (QD) laser gain material can minimize the effect of threading dislocations on threshold and power, even after aging. These lasers can have low threshold, high cw power (180 mW CW), high cw temperature (120 °C) and high T0 (>200K up to 50°C).
  • Keywords
    elemental semiconductors; quantum dot lasers; silicon; III-V layers; Si; active region; aging; cw power; cw temperature; dislocation propagation; epitaxial growth; intermediate buffer layers; power 180 mW; quantum dot laser gain material; semiconductor lasers; strained superlattices; temperature 120 degC; threading dislocations; Laser radar; Power lasers; Quantum dot lasers; Silicon photonics; Transmitters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2014 International
  • Conference_Location
    Palma de Mallorca
  • Print_ISBN
    978-1-4799-5721-7
  • Type

    conf

  • DOI
    10.1109/ISLC.2014.147
  • Filename
    6987434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1767879