DocumentCode
1768072
Title
Superradiance in electrically pumped semiconductor laser: Myth or reality?
Author
Boiko, D.L. ; Zeng, Xuan ; Stadelmann, T. ; Grossmann, S. ; Hoogerwerf, A.C.
Author_Institution
CSEM Centre Suisse d´Electron. et de Microtech., Neuchatel, Switzerland
fYear
2014
fDate
7-10 Sept. 2014
Firstpage
221
Lastpage
222
Abstract
We analyze transition from amplified spontaneous emission to Q-switched lasing in InGaN laser with absorber. We find narrow region that requires us to evoke cooperative recombination of two electron-hole pairs in X or II configuration.
Keywords
III-V semiconductors; Q-switching; electron-hole recombination; gallium compounds; indium compounds; optical pumping; semiconductor lasers; superradiance; InGaN; amplified spontaneous emission-Q-switched lasing transition; electrically pumped semiconductor laser; electron-hole pair recombination; superradiance; Charge carrier density; Laser excitation; Pump lasers; Radiative recombination; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4799-5721-7
Type
conf
DOI
10.1109/ISLC.2014.243
Filename
6987530
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