• DocumentCode
    1768301
  • Title

    A 10-bit 150MS/s SAR ADC with parallel segmented DAC in 65nm CMOS

  • Author

    Xiaoyang Wang ; Qiang Li

  • Author_Institution
    Integrated Syst. Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Firstpage
    309
  • Lastpage
    312
  • Abstract
    This paper presents a high speed parallel segmented capacitive DAC that is implemented in a 10-bit 150MSample/s successive approximation register (SAR) ADC. Compared to converters that use the conventional structure, the speed of converting one bit digital code can be 4 times faster while the power remains relatively low. In the switching procedure, a small capacitor array is used to determine the high weight codes. A parallel capacitor array structure is used to reduce the mismatch and kickback noise effect caused by the small capacitor array. A prototype 10-bit 150MS/s SAR ADC with the parallel segmented capacitor array is implemented in 65nm CMOS technology. The ADC achieves an SFDR of 83.77 dB and 9.78-bit ENOB with only 1.476mW power consumption at a 1.2-V supply, resulting in a figure of merit (FOM) of 11.19 fJ/conversion-step.
  • Keywords
    CMOS digital integrated circuits; analogue-digital conversion; high-speed integrated circuits; CMOS technology; SAR ADC; high speed parallel segmented capacitive DAC; kickback noise effect; one bit digital code; parallel capacitor array structure; parallel segmented capacitor array; power 1.476 mW; size 65 nm; successive approximation register ADC; voltage 1.2 V; weight codes; word length 10 bit; Arrays; CMOS integrated circuits; CMOS technology; Capacitance; Capacitors; Noise; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
  • Conference_Location
    Melbourne VIC
  • Print_ISBN
    978-1-4799-3431-7
  • Type

    conf

  • DOI
    10.1109/ISCAS.2014.6865127
  • Filename
    6865127