Quantitative method for estimating characteristics of conductive filament in ReRAM

Author

Zhiqiang Wei ; Yasuhara, R. ; Katayama, Kengo ; Mikawa, T. ; Ninomiya, Tamotsu ; Muraoka, S.

Author_Institution

R&D Div., Panasonic Corp., Kyoto, Japan

fYear

2014

fDate

1-5 June 2014

Firstpage

842

Lastpage

845

Abstract

A quantitative 3D conductive filament model for ReRAM is developed based on a hopping percolation theory without any fitting parameter. According to the theory, the dimensions and oxygen vacancy concentration of the conductive filament are functions of the resistance distribution. We perform Monte Carlo simulations for calculating the resistance distribution and derive the physical parameters for quantitative simulation based on the relation between resistivity and the oxygen concentration of TaO_x. The dimensions and oxygen vacancy concentration are estimated by simulating the resistance distribution. The estimated conductive filament diameters are corroborated by EBAC and TEM observations.

Keywords

Monte Carlo methods; percolation; random-access storage; tantalum compounds; transmission electron microscopy; vacancies (crystal); EBAC; Monte Carlo simulations; ReRAM; TEM; TaO; hopping percolation theory; oxygen vacancy concentration; resistance distribution; resistance random access memory; Conductivity; Electrodes; Probability; Resistance; Solid modeling; Switches; Three-dimensional displays; ReRAM; filament; percolation;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2014 IEEE International Symposium on

Conference_Location

Melbourne VIC

Print_ISBN

978-1-4799-3431-7

Type

conf

DOI

10.1109/ISCAS.2014.6865267

Filename

6865267