Simulation of TaOx-based complementary resistive switches by a physics-based memristive model

Author

Siemon, Anne ; Menzel, Stephan ; Marchewka, A. ; Nishi, Yoshio ; Waser, Rainer ; Linn, Eike

Author_Institution

Inst. fur Werkstoffe der Elektrotech. II (IWE II), RWTH Aachen Univ., Aachen, Germany

fYear

2014

fDate

1-5 June 2014

Firstpage

1420

Lastpage

1423

Abstract

Highly predictive memristive models of resistive switches are required to simulate the behavior of anti-serially connected resistive switches, so called complementary resistive switches (CRSs). As an emerging non-volatile device suited for ultra-dense memory architectures, CRS cells offer great potential also as content addressable memories. Here, we introduce a circuit model for TaO_x-based resistive switches which we implemented in VerilogA. This model is capable of predicting CRS behavior correctly.

Keywords

memristors; random-access storage; switches; tantalum compounds; CRS cells; TaO_x; VerilogA; anti-serially connected resistive switches; circuit model; complementary resistive switches; content addressable memories; highly predictive memristive models; nonvolatile device; physics-based memristive model; ultra-dense memory architectures; Current measurement; Integrated circuit modeling; Mathematical model; Memristors; Predictive models; Switches; Voltage measurement; Memristor; complementary resistive switch; memristive device; resistive switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2014 IEEE International Symposium on

Conference_Location

Melbourne VIC

Print_ISBN

978-1-4799-3431-7

Type

conf

DOI

10.1109/ISCAS.2014.6865411

Filename

6865411